Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films

被引:3
|
作者
Palathinkal, Thomas Joseph [5 ]
Tai, Nyan-Hwa [5 ]
Lee, Chi-Young [4 ]
Niu, Huan [3 ]
Cheng, Hsiu-Fung [2 ]
Pong, Way-Faung [1 ]
Lin, I-Nan [1 ]
机构
[1] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
[2] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
[3] Natl Tsing Hua Univ, Accelerator Div, Dev Ctr, Hsinchu 300, Taiwan
[4] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan
[5] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
electron field emission; films; ion implantation; UNCD; X-ray photoelectron spectroscopy; ELECTRON-EMISSION; THRESHOLD;
D O I
10.1002/ppap.200930107
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of B and N ion implantation on structural and electron field emission (EFE) properties of ultra-nanocrystalline diamond (UNCD) films are reported. Low-dose (10(12) ions/cm(2)) B ion implantation & annealing processes insignificantly changed the EFE properties, high-dose (10(15)ions/cm(2)) ion implantation & annealing processes resulted in surface graphitization for UNCD films. While the field emission property of UNCD films was greatly improved due to the N ion implantation & annealing processes, they were degraded due to B ion implantations & annealing processes. Such a phenomenon is accounted for by the fact that N ions residing in grain boundaries can convert the UNCD grains into semi-conducting by charge-transfer process, whereas B ions react with carbon forming covalent bonds and are not transferring the charges with UNCD grains.
引用
收藏
页码:S834 / S839
页数:6
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