Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

被引：3
|
作者：
Lai, Y. J.
Yang, C. S.
Chen, W. K.
Lee, M. C.
Chang, W. H.
Chou, W. C. [1 ]
Wang, J. S.
Huang, W. J.
Jeng, Erik S.
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[3] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 32023, Taiwan
[4] Chung Yuan Christian Univ, R&D Ctr Membrane Technol, Chungli 32023, Taiwan
[5] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期
关键词：
D O I：
10.1063/1.2696585
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study. (c) 2007 American Institute of Physics.
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页数：3
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