X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films

被引：5

作者：

Liu, FM ^{[1
]}

Zhang, LD ^{[1
]}

Zheng, MJ ^{[1
]}

Li, GH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2000年 / 158卷 / 3-4期

关键词：

nanocrystalline Ga0.62In0.38Sb; Ga0.62In0.38Sb-SiO2 composite film; XRD and XPS; optical properties;

D O I：

10.1016/S0169-4332(00)00022-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanocrystalline Ga0.62In0.38Sb particles embedded in SiO2 matrix were grown by radio frequency (RF) magnetron co-sputtering. X-ray diffraction (XRD) patterns and X-ray photoelectron spectroscopy (XPS) strongly support the existence of separated nanocrystalline Ga0.62In0.38Sb material in a SiO2 matrix, XPS core level data also reveal that there exists a SiO2 layer with a 1.1 eV chemical shift compared to that of pure SiO2, indicating that the SiO2 chemically adheres to the Ga0.62In0.38Sb. Room temperature Raman spectrum shows that the Raman peaks of Ga0.62In0.38Sb-SiO2 composite film have a larger red shift of 95.3 cm(-1) (LO) and 120.1 cm(-1) (TO) than those of bulk GaSb, suggesting the existence of phonon confinement and tensile stress effects. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：281 / 286

页数：6

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