Field-effect transistor studies of precursor-pentacene thin films

被引：13
|
作者：
Jarrett, CP
Brown, AR
Friend, RH
Harrison, MG
deLeeuw, DM
Herwig, P
Mullen, K
机构：
[1] PHILIPS RES LABS,NL-5656 AA EINDHOVEN,NETHERLANDS
[2] MAX PLANCK INST POLYMER RES,D-55128 MAINZ,GERMANY
来源：
SYNTHETIC METALS | 1997年 / 85卷 / 1-3期
关键词：
metal-oxide-semiconductor; (MOS); structures;
D O I：
10.1016/S0379-6779(97)80293-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Precursor-route pentacene thin film transistor characteristics are presented. The device temperature dependance is reported and the results discussed in terms of a distribution of mobilities. Voltage modulation spectroscopy is also reported and features discussed.
引用
收藏
页码：1403 / 1404
页数：2
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