Compensation of interfacial states located inside the "buffer-free" GaSb/GaAs (001) heterojunction via δ-doping

被引：12

作者：

Jallipalli, A. ^{[1
]}

Nunna, K. ^{[2
]}

Kutty, M. N. ^{[3
]}

Balakrishnan, G. ^{[3
]}

Lush, G. B. ^{[4
]}

Dawson, L. R. ^{[3
]}

Huffaker, D. L. ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[4] Univ Texas El Paso, Dept Elect & Comp Engn, El Paso, TX 79968 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

关键词：

dangling bonds; dislocations; gallium arsenide; gallium compounds; III-V semiconductors; interface states; leakage currents; semiconductor doping; semiconductor heterojunctions; surface photovoltage; tellurium; SURFACE PHOTOVOLTAGE;

D O I：

10.1063/1.3210783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the compensation of interfacial states formed by interfacial misfit dislocation (IMF) arrays via delta-doping. The IMF arrays are located inside the "buffer-free" heterojunction of GaSb/GaAs (001). The interfacial states are measured using surface photovoltage measurements and are positioned at 0.41, 0.49, and 0.61 eV. A higher reverse bias leakage current (I-RB) was observed in the heterogeneous GaSb/GaAs IMF sample (73 mu A at -5 V) compared to the homogeneous GaAs control sample (3.9 mu A), which does not contain IMF. This increase in I-RB is attributed to the interfacial states. Hence, the interfacial states are compensated by delta-doping the GaSb/GaAs interface using Te atoms. A low turn-on voltage of 0.85 V and a very low I-RB of 0.1 nA were achieved for the delta-doped sample compared to the control and IMF samples. Hence, for optoelectronic applications, such as lasers, solar cells, and detectors, this compensated IMF technology is useful for integration of buffer-free III-Sb devices on an inexpensive GaAs platform.

引用

页数：3

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