Structure of amorphous silicon investigated by EXAFS

被引:29
作者
Glover, CJ
Foran, GJ
Ridgway, MC
机构
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia
[3] Lund Univ, MAXLab, Lund, Sweden
关键词
amorphous semiconductors; extended X-ray absorption fine structure spectroscopy; silicon;
D O I
10.1016/S0168-583X(02)01544-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:195 / 199
页数:5
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