Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation

被引：217

作者：

Wong, Matthew S. ^{[1
]}

Lee, Changmin ^{[1
]}

Myers, Daniel J. ^{[1
]}

Hwang, David ^{[1
]}

Kearns, Jared A. ^{[1
]}

Li, Thomas ^{[1
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 09期

关键词：

SURFACE RECOMBINATION; GAN; DAMAGE; DISPLAY; IMPACT;

D O I：

10.7567/1882-0786/ab3949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro-light-emitting-diodes (mu LEDs) with size-independent peak external quantum efficiency behavior was demonstrated from 10 x 10 mu m(2) to 100 x 100 mu m(2) by employing a combination of chemical treatment and atomic-layer deposition (ALD) sidewall passivation. The chemical treatment and sidewall passivation improved the ideality factors of mu LEDs from 3.4 to 2.5. The results from the combination of chemical treatment and ALD sidewall passivation suggest the issue of size dependent efficiency can be resolved with proper sidewall treatments after dry etching. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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