Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors

被引：183
作者：
Tombak, A [1 ]
Maria, JP
Ayguavives, FT
Jin, Z
Stauf, GT
Kingon, AI
Mortazawi, A
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[3] Crystal Associates, E Hanover, NJ 07936 USA
[4] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[5] ATMI Inc, Danbury, CT 06810 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 02期
基金：
美国国家科学基金会;
关键词：
barium-strontium-titanate.(BST); ferroelectric; intermodulation distortion; metalorganic chemical vapor deposition (MOCVD); multilayer ground plane; paraelectric; tunable bandpass filter (BPF); tunable lowpass filter (LPF);
D O I：
10.1109/TMTT.2002.807822
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tunable lowpass and bandpass lumped-element filters employing barium-strontium-titanate (BST)-based capacitors are presented. A new metallization technique is used, which improves the quality factor of the tunable BST capacitors by a factor of two. The lowpass filter has an insertion loss of 2 dB and a tunability of 40% (120-170 MHz) with the application of 0-9-V dc bias. The bandpass filter (BPF) has an insertion loss of 3 dB and a tunability of 57% (176-276 MHz) with the application of 0-6 V de. The third-order intercept point of the BPF was measured to be 19 dBm with the application of two tones around 170 MHz.
引用
收藏
页码：462 / 467
页数：6
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