Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode

被引：66

作者：

Maeda, Takuya ^{[1
]}

Okada, Masaya ^{[2
]}

Ueno, Masaki ^{[2
]}

Yamamoto, Yoshiyuki ^{[2
]}

Kimoto, Tsunenobu ^{[1
]}

Horita, Masahiro ^{[1
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Kyoto 6158510, Japan

[2] Sumitomo Elect Ind Ltd, Itami, Hyogo 6640016, Japan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 05期

关键词：

ENERGY-GAP; CRYSTALS; VOLTAGE;

D O I：

10.7567/APEX.10.051002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of barrier height in a Ni/n-GaN Schottky barrier diode fabricated on a GaN homoepitaxial layer was investigated by capacitance-voltage, current-voltage, and internal photoemission measurements in the range of 223-573 K. The barrier height obtained by these methods linearly decreased with increasing temperature. The temperature coefficient was -(1.7-2.3) x 10(-4) eV/K, which is about half of the temperature coefficient of the band gap reported previously. This indicates that the decrease in the barrier height may mainly reflect the shrinkage of the band gap (lowering of the conduction band edge) in GaN with increasing temperature. (C) 2017 The Japan Society of Applied Physics

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页数：4

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共 33 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[2] TRANSPORT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS [J].

ARIZUMI, T ;

HIROSE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (06) :749-+

[3] Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures [J].

Arslan, Engin ;

Altindal, Semsettin ;

Oezcelik, Sueleyman ;

Ozbay, Ekmel .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)

[4] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].

BARKER, AS ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1973, 7 (02) :743-750

[5] EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].

CROWELL, CR ;

SZE, SM ;

SPITZER, WG .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&

[6] Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes [J].

Donoval, D. ;

Chvala, A. ;

Sramaty, R. ;

Kovac, J. ;

Morvan, E. ;

Dua, Ch. ;

DiForte-Poisson, M. A. ;

Kordos, P. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)

[7] Bulk ammonothermal GaN [J].

Dwilinski, R. ;

Doradzinski, R. ;

Garczynski, J. ;

Sierzputowski, L. P. ;

Puchalski, A. ;

Kanbara, Y. ;

Yagi, K. ;

Minakuchi, H. ;

Hayashi, H. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :3015-3018

[8] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

Fowler, RH .

PHYSICAL REVIEW, 1931, 38 (01) :45-56

[9] Bulk GaN crystals grown by HVPE [J].

Fujito, Kenji ;

Kubo, Shuichi ;

Nagaoka, Hirobumi ;

Mochizuki, Tae ;

Namita, Hideo ;

Nagao, Satoru .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :3011-3014

[10] ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES [J].

HACKAM, R ;

HARROP, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) :1231-+

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