Comparison of structural and optical properties of the electrochemically etched porous silicon and nanocrystalline silicon films prepared by PECVD

被引：0
|
作者：
Vikulov, V. A.
Korobtsov, V. V.
Markidonov, E. V.
Hong, B.
机构：
[1] Inst Automat & Control Proc, Vladivostok 690041, Russia
[2] Sungkyunkwan Univ, Sch Elect & Comp Engn, Suwon 440746, Kyunggi, South Korea
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2006年 / 2卷
关键词：
PECVD; nanocrystalline silicon; photoluminescence;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Correlation between the structural, morphological and optical properties of the electrochemically etched porous silicon (PS) and the nanocrystalline silicon films (nc-Si) prepared by plasma.-enhanced chemical vapor deposition (PECVD) has been studied. X-ray diffraction analysis of the nc-Si layers showed growth of a system of nanocrystals oriented along the (004)-plane. The average size of nanocrystals was estimated to be 4.8 nm. Atomic force microscopy imaging demonstrates the developed surface of deposited films which is cone-like. The observed room-temperature photo luminescence of nc-Si has a maximum at 1.55 eV The comparison of chemical bonds in nc-Si and PS was carryied out by means of Fourier transform infrared spectroscopy. The similarity of these properties of nc-Si and PS is discussed.
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页码：91 / 95
页数：5
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