High breakdown voltage characteristics in normally-off 4H-SiC VJFET using TCAD Simulation

被引：0

作者：

Khalid, Muhammad ^{[1
]}

Riaz, Saira ^{[2
]}

Grekov, Alexandrov E. ^{[3
]}

Santi, Enrico ^{[3
]}

Naseem, Shahzad ^{[2
]}

机构：

[1] NED Univ Engn & Technol, Dept Phys, Karachi 75270, Pakistan

[2] Univ Punjab, Sch Phys Sci, Ctr Excellence Solid State Phys, Microelect Div, Lahore 54590, Pakistan

[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

MATERIALS TODAY-PROCEEDINGS | 2015年 / 2卷 / 10期

关键词：

Breakdown voltage; channel width; electric field; impact ionization; temperature; VERTICAL-CHANNEL-JFETS; RELIABILITY;

D O I：

10.1016/j.matpr.2015.11.065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high temperature dependent breakdown voltages in normally-off 4H-SiC VJFET are simulated using Sentaurus TCAD at different temperatures ranging from 27 to 500 degrees C. Temperature dependent breakdown voltages simulations reveal the decrement in breakdown voltages with increasing temperature, and device exhibits negative temperature coefficient. In addition, breakdown voltages are straight forwardly linked with associated parameters like impact ionization, which is strongly dependant on electric field. The improved breakdown voltage of 14 kV (drain leakage current 10(-8) A) indicates relatively high electric field of 2.2 MV/cm. In addition, its high breakdown capability and low leakage current with adjustable channel width make 4H-SiC VJFET a desirable device for high voltage power applications. (C) 2015 Published by Elsevier Ltd.

引用

页码：5436 / 5440

页数：5

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