Selective Crystallization of Organic Semiconductors for High Performance Organic Field-Effect Transistors

被引：11

作者：

Di, Chong-an ^{[1
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

Guo, Yunlong ^{[1
]}

Sun, Xiangnan ^{[1
]}

Zheng, Jian ^{[1
]}

Wen, Yugeng ^{[1
]}

Wu, Weiping ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2009年 / 21卷 / 20期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; COMPLEMENTARY CIRCUITS; SINGLE-CRYSTALS; VAPOR-PHASE; N-TYPE; COPOLYMERS; DEPOSITION; PENTACENE; MOBILITY;

D O I：

10.1021/cm902594y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The patterning of an organic layer, a big challenge for organic field-effect transistors (OFETs), have recently received considerable attention. By using copper tetracyanoquinodimethane (Cu-TCNQ) modified copper electrodes with nanostructure, selective polycrystalline growth of organic semiconductors is achieved. For different organic semiconductors, varied ways for crystal growth are observed. The OFETs based on selectively deposited tetracyanoquinodimethane (TCNQ), rubrene, and copper phthalocyanine crystals are fabricated and exhibit good device performance. Rubrene devices exhibit maximum field-effect mobility up to 4.6 cm(2)/(V.s) which is comparable to that of corresponding single crystal device. In addition, an organic inverter made of patterned rubrene and TCNQ exhibits a gain of 23. These results offer a general approach to the fabrication of high performance OFETs and organic circuits.

引用

页码：4873 / 4879

页数：7

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