Conduction Behavior of V-SrZrO3 Thin Film Showing Resistive Switching

被引：6

作者：

Lai, Chun-Hung ^{[1
]}

Liu, Chih-Yi ^{[2
,3
]}

Tseng, Tseung-Yuen ^{[4
]}

机构：

[1] Natl United Univ, Dept Elect Engn, Miaoli 360, Taiwan

[2] Natl Kaohsiung Univ Appl Sci, Dept & Inst Elect Engn, Kaohsiung 807, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micronano Sci & Technol, Tainan 70101, Taiwan

[4] Natl Taipei Univ Technol, Taipei 106, Taiwan

来源：

FERROELECTRICS | 2009年 / 385卷

关键词：

ELECTRICAL-PROPERTIES; BOTTOM ELECTRODES; DEFECT; MEMORY;

D O I：

10.1080/00150190902886743

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper examines the electrical properties of V-doped SrZrO3 sputtered films showing bistable on/off resistive switching. The temperature dependence of dc sweep I-V data in the range of 25-100 degrees C implies the prominent role played by the off-state conduction in determining the R-switch ratio. The defects in off-state are investigated via Frenkel-Poole relation and the associated trap energy extraction. It is found that the oxygen vacancies are the possible major defects in off-state and are verified by the treatment of N-2 and O-2 annealing ambience hereafter. The nearly unchanged currents suggest the relatively more stable nature in on-state, which is consistent with the following findings: 1) the frequently observed I-V jiggle during on to off switching, 2) successful forming only found for sweep direction to on-state, 3) the better thermal disturbance immunity by longer retention for on-state, 4) the shorter pulse width needed to on-state switching for electric pulse induced resistance (EPIR) effect.

引用

页码：21 / 26

页数：6

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