The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time

被引：5

作者：

Zhao, Yue ^{[1
]}

Lv, Zhiyong ^{[1
]}

Li, Zhao ^{[1
]}

Liang, Xiaoyan ^{[1
]}

Min, Jiahua ^{[1
]}

Wang, Linjun ^{[1
]}

Shi, Weimin ^{[1
]}

Liu, Yongyue ^{[2
]}

机构：

[1] Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China

[2] Ningbo Heli Mould Technol Shareholding Co Ltd, Ningbo 315700, Zhejiang, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 04期

关键词：

Porous silicon; Photoluminescence; mu-PCD measurements; LUMINESCENCE; FABRICATION;

D O I：

10.1016/j.sse.2010.01.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the photoluminescence of as-prepared porous silicon were investigated. The visible light emission is associated with surface defects states of porous silicon. The hydrogen atoms on porous silicon surface can passivate irradiative centers and lead to the increase of emission intensity, which can be proved by the microwave-detected photoconductivity decay measurements. (C) 2010 Elsevier Ltd. All rights reserved.

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页码：452 / 456

页数：5

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