Optical and electrical properties of aluminum-doped ZnO thin films grown by pulsed laser deposition

被引：148
作者：
Liu, Yaodong
Lian, Jianshe
机构：
[1] Jilin Univ, Key Lab Automobile Mat, Minist Educ, Coll Mat Sci & Engn, Changchun 130025, Peoples R China
[2] Changchun Univ Sci & Technol, Sch Mat Sci & Engn, Changchun 130012, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 07期
关键词：
Al-doped ZnO film; ultraviolet photoluminescence; electrical properties; pulsed laser deposition;
D O I：
10.1016/j.apsusc.2006.08.012
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Transparent aluminum-doped zinc oxide (AZO) thin films were deposited on quartz glass substrates by pulsed laser deposition (PLD) from ablating Zn-Al metallic targets. The structural, electrical and optical properties of these films were characterized as a function of Al concentration (0-8 wt.%) in the target. Films were deposited at a low substrate temperature of 150 degrees C under 11 Pa of oxygen pressure. It was observed that 2 wt.% of Al in the target (or 1.37 wt.% of Al doped in the AZO film) is the optimum concentration to achieve the minimum film resistivity and strong ultraviolet emission. The presence of Al in the ZnO film changes the carrier concentration and the intrinsic defects. (c) 2006 Elsevier B.V. All rights reserved.
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收藏
页码：3727 / 3730
页数：4
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