Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

被引：80

作者：

Sun, Minglei ^{[1
]}

Chou, Jyh-Pin ^{[2
]}

Ren, Qingqiang ^{[3
]}

Zhao, Yiming ^{[4
]}

Yu, Jin ^{[5
]}

Tang, Wencheng ^{[1
]}

机构：

[1] Southeast Univ, Sch Mech Engn, Nanjing 211189, Jiangsu, Peoples R China

[2] Hungarian Acad Sci, Wigner Res Ctr Phys, Inst Solid State Phys & Opt, POB 49, Budapest, Hungary

[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60076 USA

[4] Univ Rochester, Laser Energet Lab, 250 E River Rd, Rochester, NY 14623 USA

[5] Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 17期

关键词：

INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; ELECTRONIC-STRUCTURES; BORON-NITRIDE; PHOSPHORENE; TRANSITION; SEMICONDUCTOR; CONTACTS;

D O I：

10.1063/1.4982690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 angstrom. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices. Published by AIP Publishing.

引用

页数：4

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