Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 angstrom. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices. Published by AIP Publishing.