A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

被引：119

作者：

Kauppila, Jeffrey S. ^{[1
]}

Sternberg, Andrew L. ^{[1
]}

Alles, Michael L. ^{[1
]}

Francis, A. Matt ^{[2
]}

Holmes, Jim ^{[2
]}

Amusan, Oluwole A. ^{[3
]}

Massengill, Lloyd W. ^{[1
,4
]}

机构：

[1] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37203 USA

[2] Lynguent Inc, Fayetteville, AR 72701 USA

[3] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37203 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 06期

关键词：

Integrated circuit radiation effects; MOSFETs; single-event effects; SPICE;

D O I：

10.1109/TNS.2009.2033798

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-event model capable of capturing bias-dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm CMOS process design kit. Simulation comparisons with mixed mode TCAD are presented.

引用

页码：3152 / 3157

页数：6

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