Temperature Compensated BAW Resonator and its integrated Thermistor for a 2.5GHz Electrical Thermally Compensated Oscillator

被引:0
|
作者
Petit, D. [1 ]
Cesar, E. [3 ]
Bar, P. [1 ]
Joblot, S. [1 ]
Parat, G. [4 ]
Berchaud, O. [3 ]
Verdier, J. [2 ]
Carpentier, J-F [1 ]
机构
[1] STMicroelectronics, Crolles, France
[2] INL, Villeurbanne, France
[3] ST NXP Wireless, Grenoble, France
[4] MINATEC, LETI, CEA, Grenoble, France
关键词
BAW-SMR; Differential Colpitts oscillator; Temperature compensation; Quartz;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a miniaturized 2.5 GHz frequency source based on compensated BAW resonator with its integrated temperature molybdenum sensor assembled on the differential Colpitts oscillator. The presence of silicon dioxide layer having a positive temperature coefficient compared to other layers is used to reduce the resonator's drift. A demonstration oscillator achieves a frequency drift of 40 ppm over a temperature range from -35 degrees C to +85 degrees C. The oscillator's phase noise of -113 dBc/Hz at 10 kHz offset from the carrier is reported at 2.5 GHz.
引用
收藏
页码:303 / +
页数:2
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