Electronic structure of ultrathin Si oxynitrides

被引：11

作者：

Jin, Hua ^{[1
]}

Oh, Suhk Kun ^{[1
]}

Kang, Hee Jae ^{[1
]}

机构：

[1] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea

来源：

SURFACE AND INTERFACE ANALYSIS | 2006年 / 38卷 / 12-13期

关键词：

Si oxynitride; band gap; ultrathin film; REELS; XPS;

D O I：

10.1002/sia.2435

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the chemical states and the band gap of ultrathin Si oxynitrides on Si(100) by X-ray photoemission spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Silicon oxynitride thin films were grown by plasma-nitridation and annealed-nitridation treatment. XPS results show that for the annealed-nitride SiON thin films, Si3N and N-(SiOx)(3) states exist at the interface, while for the plasma-nitride SiON thin films, Si3N, N-(SiOx)(3) and Si=N-O states exist at the surface with trapped N-2 molecules. The band gap for the annealed-nitride SiON thin film is 8.9 eV at the surface but it is reduced to about 8.45 eV at the interface. Meanwhile, the band gap for the plasma-nitride SiON thin film is 7.4 eV. In addition, REELS turns out to be an excellent method to obtain the band gap and electronic structure in oxide thin films. Copyright (C) 2006 John Wiley & Sons, Ltd.

引用

页码：1564 / 1567

页数：4

共 15 条

[1] Optical properties of SiO2 determined by reflection electron energy loss spectroscopy [J].

Bekhti, W ;

Ghamnia, A .

CATALYSIS TODAY, 2004, 89 (03) :303-306

[2] PHOTOEMISSION-STUDY OF SIOX (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 2) ALLOYS [J].

BELL, FG ;

LEY, L .

PHYSICAL REVIEW B, 1988, 37 (14) :8383-8393

[3] Direct observation of interstitial molecular N2 in Si oxynitrides -: art. no. 022901 [J].

Chung, YS ;

Lee, JC ;

Shin, HJ .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :022901-1

[4] Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides [J].

Dang, SS ;

Takoudis, CG .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1326-1330

[5] Reliability: a possible showstopper for oxide thickness scaling? [J].

Degraeve, R ;

Kaczer, B ;

Groeseneken, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (05) :436-444

[6]

Egerton RF., 2011, ELECT ENERGY LOSS SP

[7] RAPID THERMAL-OXIDATION OF SILICON IN N2O BETWEEN 800-DEGREES AND 1200-DEGREES-C - INCORPORATED NITROGEN AND INTERFACIAL ROUGHNESS [J].

GREEN, ML ;

BRASEN, D ;

EVANSLUTTERODT, KW ;

FELDMAN, LC ;

KRISCH, K ;

LENNARD, W ;

TANG, HT ;

MANCHANDA, L ;

TANG, MT .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :848-850

[8] Determination of effective electron inelastic mean free paths in SiO2 and Si3N4 using a Si reference [J].

Jung, R ;

Lee, JC ;

Orosz, GT ;

Sulyok, A ;

Zsolt, G ;

Menyhard, M .

SURFACE SCIENCE, 2003, 543 (1-3) :153-161

[9] Local atomic structure and electrical properties of nitrided Si-SiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations [J].

Lucovsky, G ;

Lee, DR ;

Hattangady, SV ;

Niimi, H ;

Gandhi, S ;

Parker, C ;

Jing, Z ;

Whitten, JL ;

Hauser, JR .

APPLIED SURFACE SCIENCE, 1996, 104 :335-341

[10] Relativistic effects in electron-energy-loss-spectroscopy observations of the Si/SiO2 interface plasmon peak [J].

Moreau, P ;

Brun, N ;

Walsh, CA ;

Colliex, C ;

Howie, A .

PHYSICAL REVIEW B, 1997, 56 (11) :6774-6781

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