InAs/GaAs quantum dot solar cells with quantum dots in the base region

被引：8

作者：

Chan, Shun ^{[1
]}

Kim, Dongyoung ^{[1
]}

Sanchez, Ana M. ^{[2
]}

Zhang, Yunyan ^{[1
]}

Tang, Mingchu ^{[1
]}

Wu, Jiang ^{[1
]}

Liu, Huiyun ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, Torrington Pl, London WC1E 7JE, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

IET OPTOELECTRONICS | 2019年 / 13卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

gallium arsenide; short-circuit currents; solar cells; indium compounds; semiconductor quantum dots; III-V semiconductors; quantum dot position; open circuit voltage; reference quantum dot solar cell; intrinsic region; deep base region; InAs-GaAs quantum dot solar cells; power conversion efficiency; voltage; 0; 73 V to 0; 9; V; InAs-GaAs; EFFICIENCY;

D O I：

10.1049/iet-opt.2018.5069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the influence of quantum dot (QD) position on the performance of solar cells was studied. The presence of QDs within the base regions leads to improved open circuit voltage (V-oc) from 0.73 to 0.90 V. Despite a slight reduction in short-circuit current (J(sc)) due to carrier collection loss, the enhancement of the V-oc of QDSCs with QDs in base region is significant enough to ensure that power conversion efficiencies (eta) are higher than the reference quantum dot solar cell (QDSC) of which QDs are embedded in the intrinsic region. Moreover, sample with QDs in deep base region achieved the highest eta of 9.75%, an increase of 29% with regard to the reference quantum dot solar cell.

引用

页码：215 / 217

页数：3

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