Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

被引：29

作者：

Weingart, S. ^{[1
]}

Bock, C. ^{[1
]}

Kunze, U. ^{[1
]}

Speck, F. ^{[2
]}

Seyller, Th. ^{[2
]}

Ley, L. ^{[2
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 26期

关键词：

ballistic transport; graphene; nanostructured materials; thin films; ELECTRON WAVE-GUIDE; MOBILITY; DEVICES; PHASE;

D O I：

10.1063/1.3276560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R-12,R-43 approximate to-170 , which is measured in a nonlocal, four-terminal configuration at 4.2 Kappa and which vanishes as the temperature is increased above 80 K.

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页数：3

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