Molecular model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics and the reliability implications for hyper-thin gate oxide

被引：72

作者：

McPherson, JW ^{[1
]}

Khamankar, RB ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 05期

关键词：

D O I：

10.1088/0268-1242/15/5/305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiO2 films, at constant electric field, show a significant reduction in time-dependent dielectric breakdown (TDDB) performance when the thickness t(ox) is scaled below 4.0 nm. This reduction in TDDB performance is coincident with and scales with the increase in direct tunnelling (DT) leakage through these hyper-thin oxide films. Assuming that the increase in DT leakage leads to more hole injection and trapping in the SiO2, the enhanced dielectric degradation rate with t(ox) reduction can be explained on the basis of an intrinsic molecular model where hole capture serves to catalyze Si-O bond breakage.

引用

页码：462 / 470

页数：9