Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories

被引：32
|
作者：
Irom, Farokh [1 ]
Nguyen, Duc N. [1 ]
Bagatin, Marta [2 ]
Cellere, Giorgio [2 ]
Gerardin, Simone [2 ]
Paccagnella, Alessandro [2 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 01期
基金：
美国国家航空航天局;
关键词：
Catastrophic; destructive; dielectric gate rupture; micro-dose; nonvolatile memory; single event; THIN GATE OXIDES; HEAVY-IONS; IRRADIATION; BREAKDOWN; RUPTURE;
D O I：
10.1109/TNS.2009.2035315
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were investigated: single effect upsets (SEUs), single effect functional interrupts (SEFIs), and a new high current phenomenon which at high LETs results in catastrophic loss of ability to erase and program the device.
引用
收藏
页码：266 / 271
页数：6
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