Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories

被引:32
|
作者
Irom, Farokh [1 ]
Nguyen, Duc N. [1 ]
Bagatin, Marta [2 ]
Cellere, Giorgio [2 ]
Gerardin, Simone [2 ]
Paccagnella, Alessandro [2 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
基金
美国国家航空航天局;
关键词
Catastrophic; destructive; dielectric gate rupture; micro-dose; nonvolatile memory; single event; THIN GATE OXIDES; HEAVY-IONS; IRRADIATION; BREAKDOWN; RUPTURE;
D O I
10.1109/TNS.2009.2035315
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were investigated: single effect upsets (SEUs), single effect functional interrupts (SEFIs), and a new high current phenomenon which at high LETs results in catastrophic loss of ability to erase and program the device.
引用
收藏
页码:266 / 271
页数:6
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