An Experimental Ultra-Low-Voltage Demodulator in 0.18-μm CMOS

被引:10
作者
Lai, Li-Shin [1 ,2 ]
Hsieh, Hsieh-Hung [1 ,2 ]
Weng, Po-Shuan [1 ,2 ]
Lu, Liang-Hung [1 ,2 ]
机构
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
关键词
Demodulator; discrete-time frequency-shift keying (FSK); Gaussian frequency-shift keying (GFSK); low power; low voltage; TRANSCEIVER; CIRCUIT;
D O I
10.1109/TMTT.2009.2029023
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An experimental demodulator suitable for ultra-low-voltage and low-power wireless applications is presented in this paper. To alleviate the stringent design constraints, discrete-time frequency-shift keying (FSK) is employed in this design. The proposed demodulator is composed of limiting amplifiers (1,As), low-pass filters (LPFs), and discrete-time quadricorrelators. For circuit implementations. negative-feedback source-degeneration gain cells are adopted in file LAs for low-voltage operations, while the LPFs are realized by Sallen-Key structure with differential difference amplifiers for reduced power consumption and chip area. As for the quadricorrelalors, delay cells are utilized in the discrete-time differentiator and the baseband signals are finally detected for logic recognition. Using a standard 0.18-mu m CMOs process, the proposed demodulator is implemented for demonstration. Operated at a 0.6-V supply voltage, the fabricated circuit consumes a de power of 2.4 mW. With a data rate of 1 Mb/s and a modulation index of 0.32, the measured bit error rates for FSK and Gaussian FSK schemes are 0.333% and 1.036%., respectively, at an IF frequency of 2 MHz.
引用
收藏
页码:2307 / 2317
页数:11
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