30 GHz monolithic voltage-controlled oscillator with dual-modulus prescaler in SiGe bipolar technology

被引：2

作者：

Ritzberger, G ^{[1
]}

Knapp, H ^{[1
]}

Böck, J ^{[1
]}

Aufinger, K ^{[1
]}

机构：

[1] Infineon Technol, D-81730 Munich, Germany

来源：

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年

关键词：

D O I：

10.1109/BIPOL.2002.1042922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an integrated circuit suitable for frequency synthesis. The circuit consists of a monolithic voltage-controlled oscillator operating up to 30.5 GHz with static divide-by-256/divide-by-257 dual-modulus prescaler and consumes 500 mW from the 5.3 V supply. It is manufactured in a pre-production 0.4 mum/85 GHz SiGe bipolar technology.

引用

页码：220 / 223

页数：4

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