Mixed-Mode Simulation of Common Emitter Amplifier Design using Bipolar Charge Plasma Transistor

In this paper, we have shown frequency response analysis of common-emitter (CE) amplifier using bipolar charge plasma transistor (BCPT) with a device-circuit approach of mixed-mode simulation. Furthermore, the passive elements are adjusted to obtain the proper operating point (Q-point) of the circuit. The mixed-mode simulation results exhibits that maximum gain of the BJT, symmetric BCPT and asymmetric BCPT are 7.3 dB, 13.5 dB, and 13.7 dB, respectively and unity gain frequency are 813 GHz, 116 GHz, and 132 GHz, respectively. The mixed-mode simulation frequency response is also validated using transfer function equation containing pole and zero through MATLAB.