Synthesis and characterization of embedded SiC phase

被引：8

作者：

Katharria, Y. S. ^{[1
]}

Singh, F. ^{[1
]}

Kumar, P. ^{[1
]}

Kanjilal, D. ^{[1
]}

机构：

[1] Interuniv Accelerator Ctr, New Delhi 110067, India

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 254卷 / 01期

关键词：

SiC; ion implantation; amorphization; X-ray diffraction; Fourier transform infrared spectroscopy;

D O I：

10.1016/j.nimb.2006.09.016

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Synthesis of embedded silicon carbide (SiC) has been carried out in n-type silicon (Si) samples having (10 0) and (111) orientations using high dose implantation of 150 keV carbon (C+) ions at room temperature. The dose is varied from 4 x 10(17) ions-cm(-2) to 8 x 10(17) ions-cm(-2) in different samples of both orientations. Post-implantation annealing at 1000 degrees C is performed in order to anneal out the implantation induced defects and to get a buried silicon carbide layer. Detailed Fourier transform infrared (FTIR) spectroscopy analysis and X-ray diffraction (XRD) studies confirm the formation of cubic SiC precipitates (beta-SiC) in the layer. The SiC precipitates have been found to exhibit a better crystalline order in Si (100) samples than in Si (111) samples. X-ray diffraction results also indicate the amorphization of ion beam bombarded region of the Si samples. After annealing the amorphized region is recrystallized into a polycrystalline phase of Si. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：78 / 82

页数：5

共 21 条

[1] Fabrication of silicone carbide thin films by plasma immersion ion implantation with self-ignites glow discharge [J].