Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel

被引：31
作者：
Boratto, Miguel H. [1 ]
Ramos, Roberto A., Jr. [1 ]
Congiu, Mirko [1 ]
Graeff, Carlos F. O. [1 ,2 ]
Scalvi, Luis V. A. [1 ,2 ]
机构：
[1] Sao Paulo State Univ Unesp, Sch Sci, POSMAT Post Grad Program Mat Sci & Technol, BR-17033360 Baum, SP, Brazil
[2] Sao Paulo State Univ Unesp, Sch Sci, Dept Phys, BR-17033360 Baum, SP, Brazil
来源：
APPLIED SURFACE SCIENCE | 2017年 / 410卷
基金：
巴西圣保罗研究基金会;
关键词：
Non-volatile memory; Memristor; Sol-gel; Thin film; RRAM; SnO2/TiO2; SNO2; THIN-FILMS; DEVICES; KINETICS; AL2O3;
D O I：
10.1016/j.apsusc.2017.03.132
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 x 10(2) in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 10(2) under applied square wave voltage. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：278 / 281
页数：4
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