Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel

被引：33

作者：

Boratto, Miguel H. ^{[1
]}

Ramos, Roberto A., Jr. ^{[1
]}

Congiu, Mirko ^{[1
]}

Graeff, Carlos F. O. ^{[1
,2
]}

Scalvi, Luis V. A. ^{[1
,2
]}

机构：

[1] Sao Paulo State Univ Unesp, Sch Sci, POSMAT Post Grad Program Mat Sci & Technol, BR-17033360 Baum, SP, Brazil

[2] Sao Paulo State Univ Unesp, Sch Sci, Dept Phys, BR-17033360 Baum, SP, Brazil

来源：

APPLIED SURFACE SCIENCE | 2017年 / 410卷

基金：

巴西圣保罗研究基金会;

关键词：

Non-volatile memory; Memristor; Sol-gel; Thin film; RRAM; SnO2/TiO2; SNO2; THIN-FILMS; DEVICES; KINETICS; AL2O3;

D O I：

10.1016/j.apsusc.2017.03.132

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 x 10(2) in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 10(2) under applied square wave voltage. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：278 / 281

页数：4

共 32 条

[1] Resistive Random Access Memory (ReRAM) Based on Metal Oxides [J].

Akinaga, Hiroyuki ;

Shima, Hisashi .

PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2237-2251

[2] Nonvolatile Memory Devices Prepared from Sol-Gel Derived Niobium Pentoxide Films [J].

Baek, Hyunhee ;

Lee, Chanwoo ;

Choi, Jungkyu ;

Cho, Jinhan .

LANGMUIR, 2013, 29 (01) :380-386

[3] Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices [J].

Biju, Kuyyadi P. ;

Liu, XinJun ;

Bourim, El Mostafa ;

Kim, Insung ;

Jung, Seungjae ;

Siddik, Manzar ;

Lee, Joonmyoung ;

Hwang, Hyunsang .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (49)

[4] Effects of Solution History on Sol-Gel Processed Tin-Oxide Thin-Film Transistors [J].

Boratto, Miguel H. ;

Scalvi, Luis V. A. ;

Goncharova, Lyudmila V. ;

Fanchini, Giovanni .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2016, 99 (12) :4000-4006

[5]

Boratto MH, 2014, MATER RES-IBERO-AM J, V17, P1420

[6] Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer [J].

Boratto, Miguel Henrique ;

de Andrade Scalvi, Luis Vicente .

CERAMICS INTERNATIONAL, 2014, 40 (02) :3785-3791

[7] 'Memristive' switches enable 'stateful' logic operations via material implication [J].

Borghetti, Julien ;

Snider, Gregory S. ;

Kuekes, Philip J. ;

Yang, J. Joshua ;

Stewart, Duncan R. ;

Williams, R. Stanley .

NATURE, 2010, 464 (7290) :873-876

[8] Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure [J].

Chen, C. ;

Song, C. ;

Yang, J. ;

Zeng, F. ;

Pan, F. .

APPLIED PHYSICS LETTERS, 2012, 100 (25)

[9] Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment [J].

Cho, Byungjin ;

Song, Sunghoon ;

Ji, Yongsung ;

Lee, Takhee .

APPLIED PHYSICS LETTERS, 2010, 97 (06)

[10] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

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