Mixed-valence impurities in lead telluride-based solid solutions

被引：193
作者：
Volkov, BA
Ryabova, LI
Khokhlov, DR
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
[2] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119992, Russia
[3] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
来源：
PHYSICS-USPEKHI | 2002年 / 45卷 / 08期
关键词：
D O I：
10.1070/PU2002v045n08ABEH001146
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.
引用
收藏
页码：819 / 846
页数：28
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