Third and fourth optical transitions in semiconducting carbon nanotubes

被引：272

作者：

Araujo, Paulo T. ^{[1
]}

Doorn, Stephen K.

Kilina, Svetlana

Tretiak, Sergei

Einarsson, Erik

Maruyama, Shigeo

Chacham, Helio

Pimenta, Marcos A.

Jorio, Ado

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[2] Los Alamos Natl Lab, Div Chem, Los Alamos, NM 87545 USA

[3] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[4] Los Alamos Natl Lab, Ctr Nonlinear Studies, Los Alamos, NM 87545 USA

[5] Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.98.067401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the optical transition energies of single-wall carbon nanotubes over broad diameter (0.7-2.3 nm) and energy (1.26-2.71 eV) ranges, using their radial breathing mode Raman spectra. We establish the diameter and chiral angle dependence of the poorly studied third and fourth optical transitions in semiconducting tubes. Comparative analysis between the higher lying transitions and the first and second transitions show two different diameter scalings. Quantum mechanical calculations explain the result showing strongly bound excitons in the first and second transitions and a delocalized electron wave function in the third transition.

引用

页数：4

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