High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD

被引：69

作者：

Liu, Zhi Hong ^{[1
,2
]}

Ng, Geok Ing ^{[1
,2
]}

Arulkumaran, Subramaniam ^{[2
]}

Maung, Ye Kyaw Thu ^{[2
]}

Teo, Khoon Leng ^{[2
]}

Foo, Siew Chuen ^{[2
]}

Sahmuganathan, Vicknesh ^{[2
]}

Xu, Tao ^{[1
]}

Lee, Chee How ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 02期

关键词：

Al2O3; atomic-layer deposited (ALD); GaN; high-electron mobility transistor (HEMT); noise; TRANSISTORS; HEMTS; OXIDE;

D O I：

10.1109/LED.2009.2036135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High microwave-noise performance is realized in AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MISHEMTs) on high-resistivity silicon substrate using atomic-layer-deposited (ALD) Al2O3 as gate insulator. The ALD Al2O3/AlGaN/GaN MISHEMT with a 0.25-mu m gate length shows excellent microwave small signal and noise performance. A high current-gain cutoff frequency f(T) of 40 GHz and maximum oscillation frequency f(max) of 76 GHz were achieved. At 10 GHz, the device exhibits low minimum-noise figure (NFmin) of 1.0 dB together with high associate gain (G(a)) of 10.5 dB and low equivalent noise resistance (R-n) of 29.2 Omega. This is believed to be the first report of a 0.25-mu m gate-length GaN MISHEMT on silicon with such microwave-noise performance. These results indicate that the AlGaN/GaN MISHEMT with ALD Al2O3 gate insulator on high-resistivity Si substrate is suitable for microwave low-noise applications.

引用

页码：96 / 98

页数：3

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