Study of transient current induced by heavy-ion in NMOS/SOI transistors

被引：40

作者：

Colladant, T ^{[1
]}

Flament, O

L'Hoir, A

Ferlet-Cavrios, V

D'Hose, C

de Pontcharra, JD

机构：

[1] Univ Paris 06, Phys Solides Grp, F-75251 Paris, France

[2] Univ Paris 07, Phys Solides Grp, F-75251 Paris, France

[3] CEA, DIF, F-91680 Bruyeres Le Chatel, France

[4] CEA, DRT, LETI, F-38054 Grenoble 9, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 06期

关键词：

heavy ion; parasitic bipolar transistor; SOI transistor; transient current measurement;

D O I：

10.1109/TNS.2002.805437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The parasitic bipolar transistor of NMOS/SOI transistors is a key element to determine the single-event upset (SEU) sensitivity. Parasitic bipolar transistor response has been investigated through transient current measurements induced by high energy heavy ions and three-dimensional (3-D) simulations. Experimental results reported allow to,estimate the parasitic current gain as a function of the heavy ion location in the MOS transistor.

引用

页码：2957 / 2964

页数：8

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