Prepare with care: Low contact resistance of pentacene Field-Effect transistors with clean and oxidized gold electrodes

被引:7
作者
Radiev, Yurii [1 ]
Widdascheck, Felix [1 ]
Goebel, Michael [2 ]
Hauke, Alrun Aline [1 ]
Witte, Gregor [1 ]
机构
[1] Philipps Univ Marburg, Mol Festkorperphys, Renthof 7, D-35037 Marburg, Germany
[2] Leibniz Inst Polymerforsch Dresden eV, Hohe Str 6, D-01069 Dresden, Germany
关键词
Organic transistor; Pentacene; Metalorganic interface; Contact resistance; Oxygen plasma; Gold oxide; ENERGY-LEVEL ALIGNMENT; THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; CHARGE-TRANSPORT; ELECTRICAL CHARACTERISTICS; ORGANIC SEMICONDUCTOR; GATE DIELECTRICS; INTERFACE; MOBILITY; MORPHOLOGY;
D O I
10.1016/j.orgel.2020.106030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In recent years, a number of researchers have voiced concerns regarding the increasing amount of publications which report record performance characteristics of organic field-effect transistors (OFETs). These devices often make use of elaborate architectures, ranging from surface treatment by self-assembled monolayers to contact-limited doping, injection layer introduction etc. While these techniques are claimed to improve the device performance, they often result in poorly defined device interfaces, such as that of the organic semiconductor with the dielectric and electrode surfaces, which render a rigorous theoretical description of the interface effects close to impossible. Furthermore, the effects of ambient exposure of prepared devices are often neglected during the analysis. In this work we introduce a completely high vacuum-based manufacturing and electrical characterization of OFETs using commercially available gold bottom-contact bottom-gate FET structures, which enables a rigorous exclusion of any air contact of the devices. Using the example of the prototypical and widely studied organic semiconductor pentacene, we compare various initial cleaning procedures of the FET-structures prior to the vacuum deposition of pentacene films on the device characteristics and complement the electrical in situ analysis by ex situ AFM measurements of the pentacene film morphology. We demonstrate that O-2 plasma cleaning with subsequent thermal annealing under vacuum conditions results in well-defined interfaces of the pentacene film with clean surface of gold electrodes, which exhibit a remarkably low width-normalized contact resistance of 1.19 k Omega cm. Additionally, we show that the formation of gold oxide on top of the electrodes as a result of O-2 plasma cleaning without subsequent heating is beneficial for the charge carrier injection, resulting in a contact resistance of only 0.16 k Omega cm - to the best of our knowledge, one of the lowest yet reported values for pentacene-gold systems. In addition, the comparative rigorous vacuum-based processing and analysis allows in particular to study also the effects of controlled exposure to ambient air - even for a short time - as well as aging under different storage conditions on the device performance.
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页数:12
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