Investigation of Traps at MoS2/Al2O3 Interface in nMOSFETs by Low-Frequency Noise

被引：8

作者：

Yuan, Hui-Wen ^{[1
]}

Shen, Hui ^{[1
]}

Li, Jun-Jie ^{[1
]}

Shao, Jinhai ^{[1
]}

Huang, Daming ^{[1
]}

Chen, Yi-Fang ^{[1
]}

Wang, P. F. ^{[1
]}

Ding, S. J. ^{[1
]}

Liu, W. J. ^{[1
]}

Chin, Albert ^{[2
]}

Li, Ming-Fu ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

基金：

中国国家自然科学基金;

关键词：

MoS2; MOSFET; Al2O3 border traps; noise; SINGLE;

D O I：

10.1109/LED.2016.2536100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS2 channel and Al2O3 gate dielectric. To avoid a possible noise signal contamination from the top MoS2 surface by oxygen or water molecules absorption, the nMOSFETs with multilayer MoS2 are fabricated, and the measurements are carried out in the vacuum. The trap density Not at the MoS2/Al2O3 interface is derived for the first time using the proposed method. It is found that the Not responsible to LFN depends strongly on the surface potential, ranging from 4 x 10(10) cm(-2) in the weak over-drive region to 5 x 10(11) cm(-2) in the strong over-drive region.

引用

页码：516 / 518

页数：3

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