Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

被引：5

作者：

Abramkin, D. S. ^{[1
,2
]}

Petrushkov, M. O. ^{[1
]}

Emelyanov, E. A. ^{[1
]}

Nenashev, A. V. ^{[1
,2
]}

Yesin, M. Yu. ^{[1
]}

Vasev, A. V. ^{[1
]}

Putyato, M. A. ^{[1
]}

Bogomolov, D. B. ^{[1
]}

Gutakovskiy, A. K. ^{[1
,2
]}

Preobrazhenskiy, V. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 02期

基金：

俄罗斯基础研究基金会; 俄罗斯科学基金会;

关键词：

molecular-beam epitaxy; InAs; GaP quantum wells; III– V compounds on silicon; surface morphology; photoluminescence; intermixing of materials; elastic strains; DEFORMATION POTENTIALS; SURFACE SEGREGATION; V SEMICONDUCTORS; LUMINESCENCE; ISLANDS; MODEL; ATOMS;

D O I：

10.1134/S1063782621020020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 -xAsyP1 -y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the InxGa1 -xAsyP1 -y alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.

引用

页码：194 / 201

页数：8

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