Optical Bleaching of Thin Film Ge on Si

被引：14

作者：

Sun, Xiaochen ^{[1
]}

Liu, Jifeng ^{[1
]}

Kimerling, Lionel C. ^{[1
]}

Michel, Jurgen ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1149/1.2986848

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin film Ge on Si is a potential active material candidate for electrically pumped monolithically integrated Si-based light emitters. Theoretical analysis has shown that a combination of strain and n-type doping can modify the band structure of Ge;so that it exhibits direct bandgap properties. Direct band-to-band optical transition is observed from the room temperature photoluminescence at around 1550nm. An optical bleaching effect occurring in lock-in pump-probe measurements indicates a precursor to optical net gain.

引用

收藏

页码：881 / 889

页数：9

相关论文

共 32 条

[1] High performance, waveguide integrated Ge photodetectors [J].

Ahn, Donghwan ;

Hong, Ching-yin ;

Liu, Jifeng ;

Giziewicz, Wojciech ;

Beals, Mark ;

Kimerling, Lionel C. ;

Michel, Jurgen ;

Chen, Jian ;

Kartner, Franz X. .

OPTICS EXPRESS, 2007, 15 (07) :3916-3921

[2] Demonstration of a silicon Raman laser [J].

Boyraz, O ;

Jalali, B .

OPTICS EXPRESS, 2004, 12 (21) :5269-5273

[3] Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications [J].

Cannon, DD ;

Liu, JF ;

Ishikawa, Y ;

Wada, K ;

Danielson, DT ;

Jongthammanurak, S ;

Michel, J ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :906-908

[4] MILLISECOND TIME-RESOLVED REFLECTANCE DIFFERENCE MEASUREMENTS OF GAAS GROWN BY SHORT-PULSE SUPERSONIC NOZZLE BEAM EPITAXY [J].

CUI, J ;

ZHANG, S ;

TANAKA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (24) :3285-3287

[5] High-speed germanium-on-SOI lateral PIN photodiodes [J].

Dehlinger, G ;

Koester, SJ ;

Schaub, JD ;

Chu, JO ;

Ouyang, QC ;

Grill, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) :2547-2549

[6] Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode [J].

Gelloz, B ;

Koshida, N .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) :4319-4324

[7] 220-fs erbium-ytterbium:glass laser mode locked by a broadband low-loss silicon/germanium saturable absorber [J].

Grawert, FJ ;

Gopinath, JT ;

Ilday, FÖ ;

Shen, HM ;

Ippen, EP ;

Kärtner, FX ;

Akiyama, S ;

Liu, J ;

Wada, K ;

Kimerling, LC .

OPTICS LETTERS, 2005, 30 (03) :329-331

[8] Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers [J].

Groenert, ME ;

Leitz, CW ;

Pitera, AJ ;

Yang, V ;

Lee, H ;

Ram, RJ ;

Fitzgerald, EA .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :362-367

[9] Electroluminescence properties of light emitting devices based on silicon nanocrystals [J].

Irrera, A ;

Pacifici, D ;

Miritello, M ;

Franzo, G ;

Priolo, F ;

Iacona, F ;

Sanfilippo, D ;

Di Stefano, G ;

Fallica, PG .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (3-4) :395-399

[10] FOURIER-SERIES METHOD FOR NUMERICAL KRAMERS-KRONIG ANALYSIS [J].

JOHNSON, DW .

JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1975, 8 (04) :490-495

← 1 2 3 4 →