Non-Destructive Imaging of Insulated Gate Bipolar Transistor Power Modules

被引：0

作者：

Bugingo, Sharhts S. ^{[1
]}

Freere, Peter ^{[1
]}

Schultz, Ross ^{[2
]}

De Beer, Frikkie C. ^{[3
]}

van Niekerk, Xandri ^{[4
]}

机构：

[1] Nelson Mandela Univ, Elect Engn Dept, Port Elizabeth, South Africa

[2] Nelson Mandela Univ, Phys Dept, Port Elizabeth, South Africa

[3] South African Nucl Energy Corp SOC Ltd Necsa, Radiat Sci, Pretoria, South Africa

[4] Nelson Mandela Univ, Chem Dept, Port Elizabeth, South Africa

来源：

2019 IEEE AFRICON | 2019年

关键词：

IGBT; scanning electron microscope; computed tomography; micro-focus X-ray tomography (XCT); brightfield observation; darkfield observation;

D O I：

10.1109/africon46755.2019.9134042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Examples are given of differing techniques of non-destructive imaging of semiconductor devices in order to detect faults which may affect their lifetime. Images are shown from optical microscopy and also X-ray systems to illustrate the visibility of faults under differing visualisation techniques. The techniques also include three dimensional visualisation. Issues with the silicone gel are described and separation of the silicon and aluminium cross sections.

引用

页数：6

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