Research of Power Loop Layout and Parasitic Inductance in GaN Transistor Implementation

被引:20
作者
Sun, Bainan [1 ]
Jorgensen, Kasper Luthje [1 ]
Zhang, Zhe [1 ]
Andersen, Michael A. E. [1 ]
机构
[1] Danmarks Tekniske Univ, Dept Elect Engn, DK-5205 Lyngby, Denmark
关键词
Inductance; Transistors; Mathematical model; Layout; Gallium nitride; Conductors; Numerical models; GaN transistor; modular buck converter; PCB layout; parasitic inductance; power loop; voltage ringing;
D O I
10.1109/TIA.2020.3048641
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Power loop is critical in the PCB layout consideration. Especially for high frequency GaN transistor applications, a low inductance power loop design is needed to guarantee the switching reliability and the operation efficiency. Finite element analysis is generally used in the power loop inductance quantification, which is time consuming and impractical for parameters sweep. In this article, a numerical equation for power loop inductance estimation is given based on the novel loop inductance model. The power loop inductance can be estimated in a fast approximation approach. Three different layout methods are compared in regard to power loop inductance and thermal performance. A modular buck converter prototype is designed to demonstrate the effectiveness of the given numerical equation for power loop inductance estimation. The pros and cons of each layout method in the practical applications are discussed.
引用
收藏
页码:1677 / 1687
页数:11
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