Research progress of defective MoS2 for photocatalytic hydrogen evolution

被引:39
作者
Liu, Chao [1 ]
Kong, Cui [1 ]
Zhang, Feng-Jun [1 ,2 ]
Kai, Chun-Mei [1 ]
Cai, Wei-Qin [1 ]
Sun, Xian-Yang [1 ]
Oh, Won-Chun [3 ]
机构
[1] Anhui Jianzhu Univ, Key Lab Funct Mol Design & Interface Proc, Hefei 230601, Anhui, Peoples R China
[2] Anhui Jianzhu Univ, Anhui Key Lab Adv Bldg Mat, Hefei 230022, Anhui, Peoples R China
[3] Hanseo Univ, Dept Adv Mat Sci & Engn, Seosan 31962, South Korea
关键词
Defect MoS2; Photocatalytic hydrogen evolution; MoS2-supported semiconductor photocatalyst; ULTRATHIN NANOSHEETS; HIGH-PERFORMANCE; MONOLAYER MOS2; EFFICIENT COCATALYST; SULFUR VACANCIES; H-2; EVOLUTION; BASAL-PLANE; LAYER MOS2; CDS; TRANSITION;
D O I
10.1007/s43207-020-00103-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The potential application of MoS2 as a potential H-2 precipitation photocatalyst has received widespread attention and is considered a promising alternative to precious metal cocatalysts due to its richness and low cost. However, the catalytic active center of MoS2 is only along the edge of the MoS2 layer. Both theoretical and experimental studies have shown that defect engineering can increase the active site of MoS2 and has superior activity in catalytic reactions. Therefore, this review describes the nature, defect types, and preparation of defective MoS2. Due to the recombination of MoS2 and semiconductor has specific interface characteristics, Schottky heterojunctions can provide accelerated charge separation and lower Schottky barriers for photocatalytic applications, they are effective photocatalysts. Therefore, the preparation of the defect MoS2-supported semiconductor photocatalyst and its application in the photocatalytic water splitting reaction are also introduced. This article's profound understanding of defects can consolidate basic photocatalysis theory and provide new insights for the rational design of satisfactory defect engineering photocatalytic materials.
引用
收藏
页码:135 / 147
页数:13
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