Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS2/Graphene Heterojunction Bubbles

被引:16
作者
Chen, Yujia [1 ]
Wang, Yunkun [2 ]
Shen, Wanfu [3 ,4 ]
Wu, Minghui
Li, Bin [4 ]
Zhang, Qu
Liu, Shuai [1 ]
Hu, Chunguang [3 ,4 ]
Yang, Shengxue [1 ]
Gao, Yunan [1 ,2 ]
Jiang, Chengbao [1 ]
机构
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys & Frontiers Sci Ctr N, Beijing 100871, Peoples R China
[3] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, CN 300072, Tianjin, Peoples R China
[4] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
two-dimensional material bubbles; strain engineering; optical interference; rhenium disulfide; in-plane anisotropy; BAND-EDGE TRANSITIONS; RES2; PHOTOLUMINESCENCE;
D O I
10.1021/acsnano.2c05272
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) material bubbles, as a straightforward method to induce strain, represent a potentially powerful platform for the modulation of different properties of 2D materials and the exploration of their strain-related applications. Here, we prepare ReS2/graphene heterojunction bubbles (ReS2/gr heterobubbles) and investigate their strain and interference synergistically modulated optical and electrical properties. We perform Raman and photoluminescence (PL) spectra to verify the continuously varying strain and the microcavity induced optical interference in ReS2/ gr heterobubbles. Kelvin probe force microscopy (KPFM) is carried out to explore the photogenerated carrier transfer behavior in both strained ReS2/gr heterobubbles and ReS2/gr interfaces, as well as the oscillation of surface potential caused by optical interference under illumination conditions. Moreover, the switching of in-plane crystal orientation and the modulation of optical anisotropy of ReS2/gr heterobubbles are observed by azimuth-dependent reflectance difference microscopy (ADRDM), which can be attributed to the action of both strain effect and interference. Our study proves that the optical and electrical properties can be effectively modulated by the synergistical effect of strain and interference in a 2D material bubble.
引用
收藏
页码:16271 / 16280
页数:10
相关论文
共 52 条
[1]   The Opposite Anisotropic Piezoresistive Effect of ReS2 [J].
An, Chunhua ;
Xu, Zhihao ;
Shen, Wanfu ;
Zhang, Rongjie ;
Sun, Zhaoyang ;
Tang, Shuijing ;
Xiao, Yun-Feng ;
Zhang, Daihua ;
Sun, Dong ;
Hu, Xiaodong ;
Hu, Chunguang ;
Yang, Lei ;
Liu, Jing .
ACS NANO, 2019, 13 (03) :3310-3319
[2]   Piezoelectricity in Monolayer Hexagonal Boron Nitride [J].
Ares, Pablo ;
Cea, Tommaso ;
Holwill, Matthew ;
Wang, Yi Bo ;
Roldan, Rafael ;
Guinea, Francisco ;
Andreeva, Daria V. ;
Fumagalli, Laura ;
Novoselov, Konstantin S. ;
Woods, Colin R. .
ADVANCED MATERIALS, 2020, 32 (01)
[3]   Vibrational Properties in Highly Strained Hexagonal Boron Nitride Bubbles [J].
Blundo, Elena ;
Surrente, Alessandro ;
Spirito, Davide ;
Pettinari, Giorgio ;
Yildirim, Tanju ;
Chavarin, Carlos Alvarado ;
Baldassarre, Leonetta ;
Felici, Marco ;
Polimeni, Antonio .
NANO LETTERS, 2022, 22 (04) :1525-1533
[4]   In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy [J].
Chenet, Daniel A. ;
Aslan, O. Burak ;
Huang, Pinshane Y. ;
Fan, Chris ;
van der Zande, Arend M. ;
Heinz, Tony F. ;
Hone, James C. .
NANO LETTERS, 2015, 15 (09) :5667-5672
[5]  
Dai ZH, 2019, ADV MATER, V31, DOI [10.1002/adma.201970322, 10.1002/adma.201805417]
[6]   Interface-Governed Deformation of Nanobubbles and Nanotents Formed by Two-Dimensional Materials [J].
Dai, Zhaohe ;
Hou, Yuan ;
Sanchez, Daniel A. ;
Wang, Guorui ;
Brennan, Christopher J. ;
Zhang, Zhong ;
Liu, Luqi ;
Lu, Nanshu .
PHYSICAL REVIEW LETTERS, 2018, 121 (26)
[7]   Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles [J].
Guo, Yang ;
Li, Bin ;
Huang, Yuan ;
Du, Shuo ;
Sun, Chi ;
Luo, Hailan ;
Liu, Baoli ;
Zhou, Xingjiang ;
Yang, Jinlong ;
Li, Junjie ;
Gu, Changzhi .
NANO RESEARCH, 2020, 13 (08) :2072-2078
[8]   Polarization sensitive behaviour of the band-edge transitions in ReS2 and ReSe2 layered semiconductors [J].
Ho, CH ;
Lee, HW ;
Wu, CC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (32) :5937-5944
[9]   Photoreflectance study of the excitonic transitions of rhenium disulphide layer compounds [J].
Ho, CH ;
Yen, PC ;
Huang, YS ;
Tiong, KK .
PHYSICAL REVIEW B, 2002, 66 (24) :1-5
[10]   Optical property of the near band-edge transitions in rhenium disulfide and diselenide [J].
Ho, CH ;
Huang, CE .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 383 (1-2) :74-79