Pulsed KrF laser annealing of blue emitting SrS:Cu,Ag thin films

被引：2

作者：

Liew, SC ^{[1
]}

Koutsogeorgis, DC ^{[1
]}

Cranton, W ^{[1
]}

Thomas, CB ^{[1
]}

机构：

[1] Nottingham Trent Univ, Ctr Creat Technol, Nottingham NG1 4BU, England

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 23期

关键词：

D O I：

10.1049/el:20020878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first successful attempt at utilising pulsed KrF (248 nm) laser annealing as a post-deposition process for RF sputtered SrS:Cu,Ag phosphor films used for thin film electroluminescent (TFEL) devices is presented. Using this novel annealing method, the luminance of the TFEL devices is observed to improve as laser fluence increases. Hence, the potential for luminance improvement of SrS:Cu,Ag TFEL devices without the need for a high temperature annealing process is demonstrated.

引用

页码：1466 / 1468

页数：3

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