Low-loss single-photon NbN microwave resonators on Si

被引：28

作者：

Carter, Faustin W. ^{[1
,2
]}

Khaire, Trupti ^{[3
]}

Chang, Clarence ^{[1
,2
]}

Novosad, Valentyn ^{[3
]}

机构：

[1] Argonne Natl Lab, High Energy Phys Div, Lemont, IL 60559 USA

[2] Univ Chicago, Kavli Inst Cosmol Phys, Chicago, IL 60637 USA

[3] Argonne Natl Lab, Mat Sci Div, Lemont, IL 60559 USA

来源：

APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 09期

关键词：

D O I：

10.1063/1.5115276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present coplanar waveguide (CPW) microwave resonators with exceptionally low loss produced from NbN sputtered on Si. The NbN films are deposited with a modest RF substrate bias during reactive DC magnetron sputtering at a substrate temperature of 250 degrees C and can achieve a critical temperature as high as 15 K depending on the N-2 flow rate. We measure the internal quality factors (Q(i)) of two such resonators at high-powers near saturation and report high-power quality factors in excess of 1.2 x 10(6) at 200 mK and 3.5 x 10(5) at 2 K. We also measure the temperature-dependent frequency shift at high power levels and the quality factor at single-photon power levels. From these measurements, we find a low-power (average photon number less than one) Q(i) value of 4.2 x 10(5) at 200 mK, which is consistent with a system limited by two-level-system loss.

引用

页数：5

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