In this work, CdSe nanocrystals (NCs) embedded in SiO2 matrix were grown by radio frequency (RF)sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4 +/- 1 nm in diameter. The temperature dependence of the photoluminescence from the CdSe/SiO2 System showed carriers thermal exchange between the NCs and deep defects in the matrix. The evolution of the excitonic energy emission with temperature is about 10 meV in the temperature range 15-295 K. This weak shift was explained by thermal mismatch between the matrix and the NCs. (C) 2009 Elsevier B.V. All rights reserved.
机构:
Zhejiang Normal Univ, Dept Phys, Hangzhou 321004, Zhejiang, Peoples R ChinaZhejiang Normal Univ, Dept Phys, Hangzhou 321004, Zhejiang, Peoples R China
Xia, Zhou
Huang, Shihua
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Zhejiang Normal Univ, Dept Phys, Hangzhou 321004, Zhejiang, Peoples R ChinaZhejiang Normal Univ, Dept Phys, Hangzhou 321004, Zhejiang, Peoples R China