Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

被引：75

作者：

Oikawa, Takuya ^{[1
]}

Saijo, Yusuke ^{[1
]}

Kato, Shigeki ^{[1
]}

Mishima, Tomoyoshi ^{[1
]}

Nakamura, Tohru ^{[1
]}

机构：

[1] Hosei Univ, Dept Elect & Elect Engn, Tokyo, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2015年 / 365卷

关键词：

GaN; P-type GaN; Mg-ion implantation; Free-standing GaN substrate; VAPOR-PHASE EPITAXY; ACTIVATION;

D O I：

10.1016/j.nimb.2015.07.095

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

P-type conversion of n(-)-GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：168 / 170

页数：3

共 11 条

[1] Microwave annealing of Mg-implanted and in situ Be-doped GaN [J].

Aluri, Geetha S. ;

Gowda, Madhu ;

Mahadik, Nadeemullah A. ;

Sundaresan, Siddarth G. ;

Rao, Mulpuri V. ;

Schreifels, John A. ;

Freitas, J. A., Jr. ;

Qadri, S. B. ;

Tian, Y. -L. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)

[2] Activation of Mg implanted in GaN by multicycle rapid thermal annealing [J].

Anderson, T. J. ;

Feigelson, B. N. ;

Kub, F. J. ;

Tadjer, M. J. ;

Hobart, K. D. ;

Mastro, M. A. ;

Hite, J. K. ;

Eddy, C. R., Jr. .

ELECTRONICS LETTERS, 2014, 50 (03) :197-198

[3] Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN [J].

Feigelson, B. N. ;

Anderson, T. J. ;

Abraham, M. ;

Freitas, J. A. ;

Hite, J. K. ;

Eddy, C. R. ;

Kub, F. J. .

JOURNAL OF CRYSTAL GROWTH, 2012, 350 (01) :21-26

[4] High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p-n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process [J].

Hatakeyama, Yoshitomo ;

Nomoto, Kazuki ;

Terano, Akihisa ;

Kaneda, Naoki ;

Tsuchiya, Tadayoshi ;

Mishima, Tomoyoshi ;

Nakamura, Tohru .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (02)

[5]

Kalinina E.V., 1999, P 3 EUR C HIGH TEMP, P91

[6] Luminescence of Acceptors in Mg-Doped GaN [J].

Monemar, Bo ;

Khromov, Sergey ;

Pozina, Galia ;

Paskov, Plamen ;

Bergman, Peder ;

Hemmingsson, Carl ;

Hultman, Lars ;

Amano, Hiroshi ;

Avrutin, Vitaliy ;

Li, Xing ;

Morkoc, Hadis .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)

[7] Preparation of freestanding GaN wafers by hydride vapor phase epitaxy with void-assisted separation [J].

Oshima, Y ;

Eri, T ;

Shibata, M ;

Sunakawa, H ;

Kobayashi, K ;

Ichihashi, T ;

Usui, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (1A-B) :L1-L3

[8]

Pearton S.J., 2006, ENG MAT PRO

[9] Luminescence properties of defects in GaN -: art. no. 061301 [J].

Reshchikov, MA ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[10] Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method [J].

Yoshida, Takehiro ;

Oshima, Yuichi ;

Eri, Takeshi ;

Ikeda, Ken ;

Yamamoto, Shunsuke ;

Watanabe, Kazutoshi ;

Shibata, Masatomo ;

Mishima, Tomoyoshi .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (01) :5-7

← 1 2 →