A 2.5 GHz Radiation Hard Fully Self-biased PLL using 0.25 μm SOS-CMOS technology

被引:2
作者
Ghosh, Partha Pratim [1 ]
Xiao, E. [1 ]
机构
[1] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
来源
2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2009年
关键词
SOS; Silicon on Sapphire; CMOS; Rad-Hard; PLL; Self-bias;
D O I
10.1109/ICICDT.2009.5166278
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a radiation hard PLL using 0.25 mu m SOS-CMOS technology for space applications. This PLL is fully self-biased and gives output frequency of 2.5GHz. This robust PLL successfully performs for all the process corners from -40 degrees C to 80 degrees C under Cadence-SpectreRF schematic and layout simulations. A new modification has been done on the differential buffers of the VCO used in the PLL to reduce phase noise. Simulation results from extracted layout including buffers and pads are enlisted for pre and post radiation environments.
引用
收藏
页码:121 / 124
页数:4
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