Valley-dependent many-body effects in two-dimensional semiconductors

被引:20
作者
Das Sarma, S. [1 ]
Hwang, E. H. [1 ]
Li, Qi [1 ]
机构
[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
来源
PHYSICAL REVIEW B | 2009年 / 80卷 / 12期
关键词
METAL-INSULATOR-TRANSITION; ELECTRON; COMPRESSIBILITY; BEHAVIOR; B=0;
D O I
10.1103/PhysRevB.80.121303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the valley degeneracy (g(v)) dependence of the many-body renormalization of quasiparticle properties in multivalley two-dimensional (2D) semiconductor structures due to the Coulomb interaction between the carriers. Quite unexpectedly, the g(v) dependence of many-body effects is nontrivial and nongeneric, and depends qualitatively on the specific Fermi-liquid property under consideration. While the interacting 2D compressibility manifests monotonically increasing many-body renormalization with increasing g(v), the 2D spin susceptibility exhibits an interesting nonmonotonic g(v) dependence with the susceptibility increasing (decreasing) with g(v) for smaller (larger) values of g(v) with the renormalization effect peaking around g(v) similar to 1-2. Our theoretical results provide a clear conceptual understanding of recent valley-dependent 2D susceptibility measurements in AlAs quantum wells.
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页数:4
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