Elastic behavior of a spherical inclusion with a given uniaxial dilatation

被引:20
作者
Bert, NA
Kolesnikova, AL
Romanov, AE
Chaldyshev, VV
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Problems Machine Sci, St Petersburg 199178, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.1529918
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The elastic behavior of a spherical inclusion with a uniaxial dilatation is considered. As an example, the experimental data on stressed nanoclusters in doped semiconductors (As-Sb clusters in GaAs) are presented. The fields of displacements, elastic strains, and stresses are determined for spherical inclusions with uniaxial dilatation, and the specific features of these fields are revealed. The elastic energy of a uniaxial spheroid is calculated and compared with that for a triaxial spheroid. The relaxation mechanisms for the elastic field of the inclusion associated with the formation of prismatic dislocation loops are considered. (C) 2002 MAIK "Nauka/Interperiodica".
引用
收藏
页码:2240 / 2250
页数:11
相关论文
共 35 条
  • [1] Strain distributions in quantum dots of arbitrary shape
    Andreev, AD
    Downes, JR
    Faux, DA
    O'Reilly, EP
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) : 297 - 305
  • [2] Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
    Barker, JA
    O'Reilly, EP
    [J]. PHYSICAL REVIEW B, 2000, 61 (20) : 13840 - 13851
  • [3] BERT NA, 1993, FIZ TVERD TELA+, V35, P2609
  • [4] Bert NA, 1996, SEMICONDUCTORS+, V30, P988
  • [5] Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
    Bert, NA
    Chaldyshev, VV
    Suvorova, AA
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    Werner, P
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (11) : 1588 - 1590
  • [6] Growth, spectroscopy, and laser application of self-ordered III-V quantum dots
    Bimberg, D
    Grundmann, M
    Ledentsov, NN
    [J]. MRS BULLETIN, 1998, 23 (02) : 31 - 34
  • [7] Local stresses induced by nanoscale As-Sb clusters in GaAs matrix
    Chaldyshev, VV
    Bert, NA
    Romanov, AE
    Suvorova, AA
    Kolesnikova, AL
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    Werner, P
    Zakharov, ND
    Claverie, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (03) : 377 - 379
  • [8] Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
    Chaldyshev, VV
    Bert, NA
    Musikhin, YG
    Suvorova, AA
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    Werner, P
    Gösele, U
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (09) : 1294 - 1296
  • [9] CHALDYSHEV VV, 2002, MAT SCI ENG B, V88, P85
  • [10] Elastic and piezoelectric fields around a buried quantum dot: A simple picture
    Davies, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1358 - 1365