Developing TEI-Aware Ultralow-Power SoC Platforms for IoT End Nodes

被引:21
作者
Han, Kyuseung [1 ]
Lee, Sukho [2 ]
Oh, Kwang-Il [1 ]
Bae, Younghwan [1 ]
Jang, Hyeonguk [2 ]
Lee, Jae-Jin [2 ]
Lee, Woojoo [3 ]
Pedram, Massoud [4 ]
机构
[1] Elect & Telecommun Res Inst, Daejeon 34129, South Korea
[2] Elect & Telecommun Res Inst, SoC Design Res Grp, Daejeon 34129, South Korea
[3] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
[4] Univ Southern Calif, Dept Elect & Elect Engn, Los Angeles, CA 90007 USA
基金
新加坡国家研究基金会; 美国国家科学基金会;
关键词
Delays; Wires; Internet of Things; Power demand; Ions; Tools; Low-power electronics; Design automation; Internet-of-Things (IoT) device; low power; RISC-V; System on Chip (SoC); ON-CHIP;
D O I
10.1109/JIOT.2020.3027479
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Ranging from circuit-level characterization to designing a platform architecture, developing a design automation tool, and fabricating a System on Chip (SoC), this article deals with the entire development process for ultralow-power (ULP) SoCs for Internet-of-Things (IoT) end nodes. More precisely, this article first focuses on the unique characteristics of the ULP circuits, the temperature effect inversion (TEI), i.e., the delay of the ULP circuits decreases with increasing temperature. Existing TEI-aware low-power (TEI-LP) techniques have incredible potential to further reduce the power consumption of conventional ULP SoCs, but there is a critical limitation to be widely adopted in real SoCs. To address this limitation and realize the ULP SoCs that can fully benefit from the TEI-LP techniques, this article proposes a new TEI-inspired SoC platform (TIP) architecture. On top of that, taking into account that the highly complex, time consuming, and labor-intensive development process of these ULP SoCs may hinder their widespread use for IoT end nodes, this article presents a new electronic design automation tool to accelerate ULP SoC development, RISC-V express (RVX). Finally, by using the RVX, this article introduces a TIP prototyping chip fabricated in 28-nm FD-SOI technology. This chip demonstrates that power savings of up to 35% can be achieved by lowering the supply voltage from 0.54 to 0.48 V at 25 degrees C and 0.44 V at 80 degrees C while continuing to operate at a target 50-MHz clock frequency.
引用
收藏
页码:4642 / 4656
页数:15
相关论文
共 42 条
[1]   Modeling and analysis of nonuniform substrate temperature effects on global ULSI interconnects [J].
Ajami, AH ;
Banerjee, K ;
Pedram, M .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2005, 24 (06) :849-861
[2]  
[Anonymous], BIOPR
[3]  
[Anonymous], K32W0X MCUS WIR IOT
[4]  
[Anonymous], 2015, IEEE INT SOLIDSTATE
[5]  
[Anonymous], ARTY A7
[6]  
[Anonymous], 2016, P 19 IEEE S LOW POWE
[7]  
[Anonymous], NEXYS VIDEO
[8]  
[Anonymous], KINTEX ULTRASCALE
[9]  
Arteris, NOC INT IMPR SOC EC
[10]  
Ashouei Maryam, 2010, Proceedings of the 2010 17th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2010), P285, DOI 10.1109/ICECS.2010.5724509