High-energy storage density and excellent temperature stability in antiferroelectric/ferroelectric bilayer thin films

被引：68
作者：
Zhang, Tiandong [1 ]
Li, Weili [1 ,2 ]
Hou, Yafei [1 ]
Yu, Yang [1 ]
Song, Ruixuan [1 ]
Cao, Wenping [1 ]
Fei, Weidong [1 ,3 ]
机构：
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin, Peoples R China
[2] Harbin Inst Technol, Natl Key Lab Sci & Technol Precis Heat Proc Met, Harbin, Peoples R China
[3] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin, Peoples R China
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2017年 / 100卷 / 07期
基金：
中国国家自然科学基金;
关键词：
energy harvesting; lead zirconate titanate; sol-gel; thin films; PERFORMANCE;
D O I：
10.1111/jace.14876
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The antiferroelectric/ferroelectric (PbZrO3/PbZr0.52Ti0.48O3) bilayer thin films were fabricated on a Pt(111)/Ti/SiO2/Si substrate using sol-gel method. PbZr0.52Ti0.48O3 layer acts as a buffered layer and template for the crystallization of PbZrO3 layer. The PbZrO3 layer with improved quality can share the external voltage due to its smaller dielectric constant and thinner thickness, resulting in the enhancements of electric field strength and energy storage density for the PbZrO3/PbZr0.52Ti0.48O3 bilayer thin film. The greatly improved electric breakdown strength value of 2615kV/cm has been obtained, which is more than twice the value of individual PbZr0.52Ti0.48O3 film. The enhanced energy storage density of 28.2J/cm(3) at 2410kV/cm has been achieved in PbZrO3/PbZr0.52Ti0.48O3 bilayer film at 20 degrees C, which is higher than that of individual PbZr0.52Ti0.48O3 film (15.6J/cm(3)). Meanwhile, the energy storage density and efficiency of PbZrO3/PbZr0.52Ti0.48O3 bilayer film increase slightly with the increasing temperature from 20 degrees C to 120 degrees C. Our results indicate that the design of antiferroelectric/ferroelectric bilayer films may be an effective way for developing high power energy storage density capacitors with high-temperature stability.
引用
收藏
页码：3080 / 3087
页数：8
相关论文
共 38 条
[1]   Endopolyploidization and flowering time are antagonistically regulated by checkpoint component MAD1 and immunity modulator MOS1 [J].
Bao, Zhilong ;
Zhang, Ning ;
Hua, Jian .
NATURE COMMUNICATIONS, 2014, 5
[2]   Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage [J].
Bonaccorso, Francesco ;
Colombo, Luigi ;
Yu, Guihua ;
Stoller, Meryl ;
Tozzini, Valentina ;
Ferrari, Andrea C. ;
Ruoff, Rodney S. ;
Pellegrini, Vittorio .
SCIENCE, 2015, 347 (6217)
[3]   TEMPERATURE-TIME TEXTURE TRANSITION OF PB(ZR1-XTIX)O-3 THIN-FILMS .1. ROLE OF PB-RICH INTERMEDIATE PHASES [J].
CHEN, SY ;
CHEN, IW .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (09) :2332-2336
[4]   Nano iron oxide-deposited calcium copper titanate/polyimide hybrid films induced by an external magnetic field: toward a high dielectric constant and suppressed loss [J].
Chi, Qing Guo ;
Dong, Jiu Feng ;
Zhang, Chang Hai ;
Wong, Ching Ping ;
Wang, Xuan ;
Lei, Qing Quan .
JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (35) :8179-8188
[5]   Enhanced dielectric performance of amorphous calcium copper titanate/polyimide hybrid film [J].
Chi, Qingguo ;
Sun, Jia ;
Zhang, Changhai ;
Liu, Gang ;
Lin, Jiaqi ;
Wang, Yuning ;
Wang, Xuan ;
Lei, Qingquan .
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (01) :172-177
[6]   Electrical Energy Storage for the Grid: A Battery of Choices [J].
Dunn, Bruce ;
Kamath, Haresh ;
Tarascon, Jean-Marie .
SCIENCE, 2011, 334 (6058) :928-935
[7]   Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations [J].
Ge, Jun ;
Remiens, Denis ;
Costecalde, Jean ;
Chen, Ying ;
Dong, Xianlin ;
Wang, Genshui .
APPLIED PHYSICS LETTERS, 2013, 103 (16)
[8]   A Hybrid Material Approach Toward Solution-Processable Dielectrics Exhibiting Enhanced Breakdown Strength and High Energy Density [J].
Han, Kuo ;
Li, Qi ;
Chanthad, Chalathorn ;
Gadinski, Matthew R. ;
Zhang, Guangzu ;
Wang, Qing .
ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (23) :3505-3513
[9]  
Hao XH, 2012, APPL PHYS LETT, V102, P1
[10]  
Hao XH, 2012, J APPL PHYS, V112, P1
1234